Silicon Carbide for Solid-State Qubits, Opto-Electronics and Power Electronics
U.S. Army Research Laboratory
April 27, 2018
Starting at $79720
Full Time - Experienced
Optical Fabrication & Testing (FM), Optical Material Studies (OM), Optoelectronics (PO), Quantum Optical Science and Technology (OQ)
Years of Experience:
U.S. Army Research Laboratory, Adelphi, MD
A research opportunity is available with the U.S Army Research Laboratory's (ARL) Sensors and Electron Devices Directorate (SEDD) located in Adelphi, MD. SEDD is seeking a highly motivated candidate for a Postdoctoral Fellowship with a background in Physics, Materials Science, Electrical Engineering or related fields.
Silicon Carbide is a well-established wide-bandgap semiconductor with demonstrated commercial uses primarily for power electronics and as a substrate for lighting. Current research at ARL is aligned to demonstrating point defects in silicon carbide as a viable candidate for quantum technologies. The potential for a solid state quantum network provides a prominent role for a silicon carbide qubit integrated with sensing capabilities.
Research proposals are solicited in the following areas: (i) Epitaxial growth of low-strain, low defect density silicon carbide by CVD and relevant material characterization for use as solid-state spin qubits in different SiC polytypes and device structures, (ii) Modeling and fabrication of photonic crystal nanostructures in SiC for quantum device development and hybrid GaN/SiC optoelectronic sensors or (iii) Development and demonstration of hybrid devices that integrate quantum, opto-electronic, MEMS and/or power electronic components in SiC on the wafer scale.
Previous experience in at least two of the following areas is desirable: epitaxial semiconductor crystal growth (CVD, MBE), semiconductor processing (lithography, etching and deposition for photonic crystal structures, power and/or optoelectronic devices), magnetic resonance (ESR, NMR, ODMR), optical characterization (PL, SE, FTIR, Raman), electrical characterization (capacitance-voltage, Hall) or structural characterization (XRD, AFM, SEM, XPS).
Candidate must demonstrate:
competency in experimental design, techniques and execution
initiative to succeed in a multidisciplinary environment
proficiency in verbal and written communication skills
capability to generate, analyze and present data
ability to write technical reports and journal articles
Employment will be located at the Army Research Laboratory on a US Department of Defense (DoD) facility. Security restrictions apply that may preclude non-US citizens from meaningful participation in these efforts – U.S. Citizenship is strongly desired.
Additional Salary Information: Additionally, the cost of health insurance and a travel stipend are provided.
Internal Number: ARL-SEDD-R-1835739655
About U.S. Army Research Laboratory
The United States Army Research Laboratory fosters scientific creativity in a wide range of scientific disciplines. Scientists at ARL have access to multiple avenues of development in both their research and career goals. The sense of satisfaction of knowing that their work can make a difference to Soldiers every day spurs discovery among the nearly 1,300 scientists and engineers working in ARL's world-class facilities.